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| IRFY044C MECHANICAL DATA Dimensions in mm (inches) 10.41 10.67 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 0.89 1.14 16.38 16.89 13.39 13.64 123 12.70 19.05 60V 20A 0.035 10.41 10.92 * HERMETICALLY SEALED TO-220 METAL PACKAGE * SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT * ALL LEADS ISOLATED FROM CASE 2.54 BSC 2.65 2.75 TO-220M - Metal Package Ceramic Lead Seals Pad 1 - Gate Pad 2 - Drain Pad 3 - Source AVAILABLE SCREENINGS FULL ASSESSMENT LEVEL SEQUENCE A SEQUENCE B SEQUENCE C SEQUENCE D IRFY044C.MOD IRFY004C-A IRFY004C-B IRF044C-C IRFY044C-D IRFY044CJ IRFY044CJXV IRFY044CJTX ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RJC RJA Gate - Source Voltage Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 20V 20A 20A 128A 60W 0.48W/C -55 to 150C 2.1C/W max. 80C/W max. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 11/95 IRFY044C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter BVDSS TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On-State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1mA VGS = 10V VDS = VGS VDS 15V VGS = 0 VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 20A VDS = 0.5BVDSS VGS = 10V VDD = 30V ID = 20A RG = 9.1 ID = 20A ID = 250A ID = 20A VDS = 0.8BVDSS TJ = 125C ID = 1mA Min. 60 Typ. Max. Unit V BVDSS Temperature Coefficient of Reference to 25C 0.68 0.035 2 17 25 250 100 -100 2400 1100 230 39 6.7 18 88 15 52 23 130 81 79 20 128 4 V / C V S( A nA )( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS pF nC ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 20A VGS = 0 IF = 20A TJ = 25C di / dt 100A/s VDD 50V 8.7 8.7 TJ = 25C A V ns C 2.5 220 1.6 PACKAGE CHARACTERISTICS Internal Drain Inductance (from 6mm down drain lead pad to centre of die) Internal Source Inductance (from 6mm down source lead to centre of source bond pad) nH Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 11/95 |
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